NPN bipolar transistor (Ebers–Moll model)
Description
A bipolar junction transistor (BJT or bipolar transistor) is a type of transistor that relies on the contact of two types of semiconductor for its operation. NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor (the “base”) between two N-doped layers. A small current entering the base is amplified to produce a large collector and emitter current. The DC emitter and collector currents in active mode are well modeled by an approximation to the Ebers–Moll model.
Related formulasVariables
IE | The emitter current (A) |
IES | The reverse saturation current of the base–emitter diode (A) |
VBE | The base–emitter voltage (mV) |
VT | The thermal voltage (mV) |