Bipolar junction transistor (Common-emmiter current gain )

Description

A bipolar junction transistor (or bipolar transistor) is a type of transistor that relies on the contact of two types of semiconductor for its operation. Bipolar transistors are so named because their operation involves both electrons and holes. The proportion of electrons able to cross the base and reach the collector is a measure of the BJT efficiency. The common-emitter current gain is represented by βF or hFE; it is approximately the ratio of the DC collector current to the DC base current in forward-active region.

Related formulas

Variables

hFEThe common-emitter current gain (dimensionless)
IcollectorThe DC collector current (A)
IbaseThe DC base current in forward-active region (A)